description: the central semiconductor cmkd6001 type contains three (3) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a ultramini tm surface mount package, designed for switching applications requiring extremely low leakage. marking code: k01 cmkd6001 surface mount ultramini tm triple isolated low leakage silicon switching diodes central semiconductor corp. tm r3 (21-november 2008) sot-363 case maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 500 ma forward surge current, tp=1 .0s i fsm 4.0 a forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =75v 500 pa bv r i r =100a 100 v v f i f =1.0ma 0.85 v v f i f =10ma 0.95 v v f i f =100ma 1.1 v c t v r =0, f=1.0mhz 2.0 pf t rr i r =i f =10ma, r l =100 rec. to 1.0ma 3.0 s
central semiconductor corp. tm cmkd6001 surface mount ultramini tm triple isolated low leakage silicon switching diodes r3 (21-november 2008) sot-363 case - mechanical outline lead code: 1) anode d1 2) anode d2 3) anode d3 4) cathode d3 5) cathode d2 6) cathode d1 marking code: k01 pin configuration
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